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 ?2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com ES1F - ES1J Rev. A ES1F - ES1J Fast Rectifiers July 2007 ES1F - ES1J Fast Rectifiers Features ? For surface mount applications. ? Glass passivated junction. ? Low profile package. ? Easy pick and place. ? Built-in strain relief. ? Superfast recovery times for high efficiency. Absolute Maximum Ratings * Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics * P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area. Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Value Units ES1F ES1G ES1H ES1J VRRM Maximum Repetitive Reverse Voltage 300 400 500 600 V IF(AV) Average Rectified Forward Current 1.0 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave (JEDEC method) 30 A TJ Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C PD Power Dissipation 1.47 W Symbol Parameter Value Units RθJA Thermal Resistance, Junction to Ambient * 85 °C/W RθJL Thermal Resistance, Junction to Lead * 35 °C/W Symbol Parameter Value Units VF Maximum Forward Voltage @ IF = 1.0 A 1.3 1.7 V Trr Maximum Reverse Recovery Time I F = 0.5 A, IR = 1.0 A, IRR = 0.25 A 35 ns IR Maximum Reverse Current @ rated VR TA = 25°C T A = 100°C 5.0 100 uA Cj Typical Junction Capacitance V R = 4.0 V, f = 1.0 MHz 10.0 8.0 pF Color Band Denotes Cathode SMA(DO-214AC) |